dmn3110s document number: ds31561 rev. 3 - 2 1 of 6 www.diodes.com october 2013 ? diodes incorporated dmn3110s new product n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 30v 73m ? @ v gs = 10v 3.3a 110m ? @ v gs = 4.5v 2.7a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? general purpose interfacing switch ? power management functions ? boost application ? analog switch features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.027 grams (approximate) ordering information (note 4) part number case packaging dmn3110s-7 sot-23 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html marking information date code key year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d mn7 = product type marking code ym = date code marking for sat (shanghai assembly/ test site) y ? m = date code marking for cat (chengdu assembly/ test site) y or y ? = year (ex: a = 2013) m = month (ex: 9 = september) chengdu a/t site shanghai a/t site
dmn3110s document number: ds31561 rev. 3 - 2 2 of 6 www.diodes.com october 2013 ? diodes incorporated dmn3110s new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = 10v steady state t a = +25c t a = +70c i d 2.5 2.0 a continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 3.3 2.7 a continuous drain current (note 6) v gs = 10v t Q 10sec t a = +25c t a = +70c i d 3.8 3.1 a continuous drain current (note 6) v gs = 4.5v steady state t a = +25c t a = +70c i d 2.7 2.1 a pulsed drain current (note 7) i dm 25 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 0.74 w thermal resistance, junction to ambient (note 5) r ? ? Q 10sec p d 1.8 w thermal resistance, junction to ambient (note 6) t Q 10sec r ? electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250 a zero gate voltage drain current @t c = +25c i dss - - 1.0 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs ( th ) 1.0 - 3.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 54 73 m ? v gs = 10v, i d = 3.1a - 88 110 v gs = 4.5v, i d = 2a forward transfer admittance |y fs | - 4.8 - ms v ds = 10v, i d = 3.1a diode forward voltage (note 6) v sd - 0.75 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 9) input capacitance c iss - 305.8 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 39.9 - pf reverse transfer capacitance c rss - 39.5 - pf gate resistance r g - 1.4 - ? v ds = 0v, v gs = 0v,f = 1.0mhz total gate charge (v gs = 4.5v) q g - 4.1 - nc v gs = 10v, v ds = 10v, i d = 3a total gate charge (v gs = 10v) q g - 8.6 - nc gate-source charge q g s - 1.2 - nc gate-drain charge q g d - 1.5 - nc turn-on delay time t d ( on ) - 2.6 - ns v dd = 15v, v gs = 10v, r l = 47 ? , r g = 3 ? , turn-on rise time t r - 4.6 - ns turn-off delay time t d ( off ) - 13.1 - ns turn-off fall time t f - 2.5 - ns notes: 5. device mounted on fr-4 pcb, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, on 1inch square copper plate 7. device mounted on minimum recommended pad layout test board, 10 s pulse duty cycle = 1% 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to product testing.
dmn3110s document number: ds31561 rev. 3 - 2 3 of 6 www.diodes.com october 2013 ? diodes incorporated dmn3110s new product v , drain -source voltage(v) fig. 1 typical output characteristics ds i, d r ain c u r r en t (a) d 0.0 2.0 4.0 6.0 8.0 10.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v =10v gs v =4.5v gs v =4.0v gs v =3.5v gs v=3.0v gs v=2.5v gs v , gate source voltage(v) fig. 2 typical transfer characteristics gs i, d r ain c u r r en t (a) d 0 2 4 6 8 10 012 345 t = 150 c a ? t = 125 c a ? t = 85c a ? t = 25c a ? t = -55c a ? v = 5.0v ds i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d r ,d r ain-s o u r ce o n- r esistance( ) ds(on) ? 0.01 0.1 1 0 4 8 12 16 20 i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance( ) ds(on) ? 0 0.04 0.08 0.12 0.16 0246810 v = 4.5v gs t = -55c a ? t = 25c a ? t = 85c a ? t = 125 c a ? t = 150 c a ? -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 5 on-resistance variation with temperature r , drain-source on-resistance (normalized) ds(on) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 6 on-resistance variation with temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? 0 0.02 0.04 0.06 0.08 0.1 v =10v i=10a gs d v =4.5v i=5a gs d
dmn3110s document number: ds31561 rev. 3 - 2 4 of 6 www.diodes.com october 2013 ? diodes incorporated dmn3110s new product -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 7 gate threshold variation vs. ambient temperature a v , gate threshold voltage(v) gs(th) 0 0.4 0.8 1.2 1.6 2 2.4 i, s o u r c e c u r r e n t (a ) s v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 t= 25c a ? v , drain-source voltage (v) fig. 9 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e (p f ) t c iss c oss c rss 10 100 1000 0 5 10 15 20 25 30 f = 1mhz v , drain-source voltage(v) fig. 10 typical drain-source leakage current vs. voltage ds i, leaka g e c u r r e n t (na) dss 0.1 1 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 t =150c a t =125c a t =85c a t =25c a t =-55c a 0 2 4 6 8 10 q , total gate charge (nc) fig. 11 gate-charge characteristics g v , gate-source voltage (v) gs 02 46810
dmn3110s document number: ds31561 rev. 3 - 2 5 of 6 www.diodes.com october 2013 ? diodes incorporated dmn3110s new product package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. 0.001 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration times (sec) fig. 12 transient thermal resistance r (t)=r(t) * r ?? ja ja r=54c/w duty cycle, d=t1/ t2 ? ja r(t), transient thermal resistance 1 sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 ?? 8 all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 x e y c z j k 1 k l 1 g a u g e p l a n e 0 . 2 5 h l m a l l 7 a c b d g f a
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